Are you in need of part numbers 1816-0005, 351-8893-010, 5201-1J, 5301-1D 883B, 69020700-04 from Hewlett Packard Inc, Rockwell Collins Inc, Mmi Amd, General Dynamics Information Systems, Fairchild Semiconductor Corporation manufacturers of NSN 5962012886900? ASAP Parts Online has the part number in stock and ready to be shipped. Along with NSN 5962012886900 corresponding part numbers, we have access to billions of premium parts such as Microcircuit Memory for the aviation, defense, and military industries. We are here to help streamline the process.
Alternative NSN: 5962-01-288-6900 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012886900 |
NCB Code: USA (01) |
Manufacturers: Dla Land And Maritime , Fairchild Semiconductor Corporation , General Dynamics Information Systems , Hewlett Packard Inc , Intersil Inc , Lansdale Semiconductor Inc , Mmi Amd , Raytheon Company , Rockwell Collins Inc , Texas Instruments Incorporated , University Of Texas At Austin |
Part No Part No
|
Item Name Item Name
|
Manufacturer Manufacturer
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
1816-0005 | microcircuit memory | Hewlett Packard Inc | Avl |
|
351-8893-010 | microcircuit memory | Rockwell Collins Inc | Avl |
|
351-8893-010 | microcircuit memory | Mmi Amd | Avl |
|
5201-1J | microcircuit memory | Mmi Amd | Avl |
|
5301-1D 883B | microcircuit memory | Mmi Amd | Avl |
|
69020700-04 | microcircuit memory | General Dynamics Information Systems | Avl |
|
82S129N | microcircuit memory | Fairchild Semiconductor Corporation | Avl |
|
ED1365-001 | microcircuit memory | University Of Texas At Austin | Avl |
|
G267767-1 | microcircuit memory | Raytheon Company | Avl |
|
HL7611 | microcircuit memory | Lansdale Semiconductor Inc | Avl |
|
HL7611E1 | microcircuit memory | Lansdale Semiconductor Inc | Avl |
|
HM1-7611-8 | microcircuit memory | Intersil Inc | Avl |
|
ROM-PROM HEAD 005 | microcircuit memory | Dla Land And Maritime | Avl |
|
TBP24S10N9 | microcircuit memory | Texas Instruments Incorporated | Avl |
|
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0 840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0 185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 739 0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55 0 TO 125 0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65 0 TO 150 0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | SCHOTTKY AND BIPOLAR AND PROGRAMMABLE AND MONOLITHIC |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0 5 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
ZZZK | SPECIFICATIONSTANDARD DATA | 81349-MIL-M-38510203 GOVERNMENT SPECIFICATION |
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