Are you in need of part numbers 1DT6116-S120CB, 351-5642-022, 3598757-1, B96668, IDT6116-S120CB from Integrated Device Technology Inc, Rockwell Collins Inc, Honeywell International Inc, Mbda Incorporated, Raytheon E Systems Inc manufacturers of NSN 5962011986086? ASAP Parts Online has the part number in stock and ready to be shipped. Along with NSN 5962011986086 corresponding part numbers, we have access to billions of premium parts such as Microcircuit Memory for the aviation, defense, and military industries. We are here to help streamline the process.
Alternative NSN: 5962-01-198-6086 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011986086 |
NCB Code: USA (01) |
Manufacturers: Honeywell International Inc , Integrated Device Technology Inc , Mbda Incorporated , Raytheon E Systems Inc , Rockwell Collins Inc |
Part No Part No
|
Item Name Item Name
|
Manufacturer Manufacturer
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
1DT6116-S120CB | microcircuit memory | Integrated Device Technology Inc | Avl |
|
351-5642-022 | microcircuit memory | Rockwell Collins Inc | Avl |
|
3598757-1 | microcircuit memory | Honeywell International Inc | Avl |
|
B96668 | microcircuit memory | Mbda Incorporated | Avl |
|
IDT6116-S120CB | microcircuit memory | Integrated Device Technology Inc | Avl |
|
IDT6116S120DB | microcircuit memory | Integrated Device Technology Inc | Avl |
|
IDT6116SA120CB | microcircuit memory | Integrated Device Technology Inc | Avl |
|
IDT6116SA120DB | microcircuit memory | Integrated Device Technology Inc | Avl |
|
MC-E0022-001 | microcircuit memory | Raytheon E Systems Inc | Avl |
|
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1 180 INCHES MINIMUM AND 1 220 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0 280 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0 120 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1 0 WATTS |
AFGA | OPERATING TEMP RANGE | -55 0 TO 125 0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65 0 TO 150 0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | STATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 23 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
FEAT | SPECIAL FEATURES | TTL COMPATIBLE |
TTQY | TERMINAL TYPE AND QUANTITY | 11 PRINTED CIRCUIT |
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